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| ON Semiconductort Switching Transistors NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD TJ, Tstg Value 15 40 40 4.5 200 625 5.0 -55 to +150 Unit Vdc Vdc Vdc Vdc MPS2369 MPS2369A* *ON Semiconductor Preferred Device 1 mAdc mW mW/C C 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 200 Unit C/W COLLECTOR 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 10 Adc, VBE = 0) Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 125C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. V(BR)CEO MPS2369A V(BR)CES MPS2369,A V(BR)CBO MPS2369,A V(BR)EBO MPS2369,A ICBO MPS2369,A ICES MPS2369,A -- -- -- -- -- -- 0.4 30 0.4 Adc Adc 4.5 -- -- Vdc 40 -- -- Vdc 40 -- -- Vdc 15 -- -- Vdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 June, 2001 - Rev. 2 Publication Order Number: MPS2369/D MPS2369 MPS2369A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc, TA = -55C) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = -55C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base-Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 10 mAdc, IB = 1.0 mAdc, TA = -55C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) hFE MPS2369A MPS2369 MPS2369 MPS2369A MPS2369A MPS2369A MPS2369 MPS2369A VCE(sat) MPS2369 MPS2369A MPS2369A MPS2369A MPS2369A VBE(sat) MPS2369 MPS2369A MPS2369A MPS2369A MPS2369A 0.7 0.5 -- -- -- -- -- -- -- -- 0.85 -- 1.02 1.15 1.60 -- -- -- -- -- -- -- -- -- -- 0.25 0.20 0.30 0.25 0.50 Vdc -- 20 40 40 20 30 20 20 -- -- -- -- -- -- -- -- 120 -- 120 -- -- -- -- -- Vdc -- SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Cobo MPS2369,A hfe MPS2369,A 5.0 -- -- -- -- -- 4.0 pF SWITCHING CHARACTERISTICS Storage Time (IB1 = IB2 = IC = 10 mAdc) (Figure 3) Turn-On Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) (Figure 1) Turn-Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Figure 2) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ts MPS2369,A ton MPS2369,A toff MPS2369,A -- 10 18 ns -- 8.0 12 ns -- 5.0 13 ns http://onsemi.com 2 MPS2369 MPS2369A +10.6 V 0 -1.5 V t1 3.0 V 270 3.3 k < 1.0 ns CS* < 4.0 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0% Figure 1. ton Circuit +10.75 V 0 -4.15 V t1 3.0 V 270 3.3 k < 1.0 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0% CS* < 4.0 pF Figure 2. toff Circuit +6.0 V 0 -4.0 V t1 10 V 980 500 < 1.0 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0% CS* < 3.0 pF Figure 3. Storage Test Circuit *Total shunt capacitance of test jig and connectors. http://onsemi.com 3 MPS2369 MPS2369A PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 4 MPS2369/D |
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